@article { WOS:000469885300005,
	title = {Radiative Recombination Changes under Light-Soaking in CsPbBr<sub>3</sub> Films on TiO<sub>2</sub> and Insulating Glass Contacts: Interface versus Bulk Effects},
	journal = {ACS APPLIED ENERGY MATERIALS},
	volume = {2},
	number = {5},
	year = {2019},
	month = {MAY},
	pages = {3013-3016},
	abstract = {The steady-state photoluminescence (PL) of CsPbBr3 films with varying thicknesses was studied under light-soaking on semiconductive and insulating contacts, showing reversible changes in PL, entirely dependent on the nature of the contact and film thicknesses. The PL at 50-100 nm CsPbBr3 on TiO2 increased, and decreased in thicker layers, with no thickness-dependent PL in CsPbBr3 on glass/Al2O3. These observations are described using a spatial charge distribution model which interprets the migration of Br- and V-Br(+) under light-soaking as suppressing electron injection into the TiO2 due to upward band bending, enhancing PL at the interface and nonradiative recombination further away from it.},
	issn = {2574-0962},
	doi = {10.1021/acsaem.9b00335},
	url = {https://pubs.acs.org/doi/10.1021/acsaem.9b00335},
	author = {Hu, Jiangang and Gouda, Laxman and Kama, Adi and Tirosh, Shay and Gottesman, Ronen}
}
